參數(shù)資料
型號(hào): 70V659S15DR
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
封裝: 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
文件頁數(shù): 9/24頁
文件大小: 316K
代理商: 70V659S15DR
17
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
Waveform of BUSY Arbitration Controlled by CE Timing (M/S = VIH)(1)
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing (M/S = VIH)(1)
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
4869 drw 14
ADDR"A"
and "B"
ADDRESSES MATCH
CE"A"
CE"B"
BUSY"B"
tAPS
tBAC
tBDC
(2)
4869 drw 15
ADDR"A"
ADDRESS "N"
ADDR"B"
BUSY"B"
tAPS
tBAA
tBDA
(2)
MATCHING ADDRESS "N"
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Symbol
Parameter
Min.
Max.Min.Max.Min.Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tINS
Interrupt Set Time
____
10
____
12
____
15
ns
tINR
Interrupt Reset Time
____
10
____
12
____
15
ns
4869 tbl 15
相關(guān)PDF資料
PDF描述
7P12FLV250I25 6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
7P12FLV281C15 6M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
7P12FLV512C25 6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
7P12FLV552I25 6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
7P12FLV572I15 6M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
70V659S15DRI 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 15NS 208PQFP - Bulk
70V7319S133BC 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C(TA) 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA(17x17) 標(biāo)準(zhǔn)包裝:6
70V7319S133BC8 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:帶卷(TR) 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C(TA) 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA(17x17) 標(biāo)準(zhǔn)包裝:1,000
70V7319S133BF 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:IDT 存儲(chǔ)容量: 組織: 訪問時(shí)間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:
70V7319S133BF8 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 256KX18 15NS/4.2NS 208FBGA - Tape and Reel