參數(shù)資料
型號(hào)： 70V659S15DR
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
封裝： 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
文件頁數(shù)： 23/24頁
文件大?。?/td> 316K
代理商： 70V659S15DR
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
8
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time
or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD
+ 150mV.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to + 4.6
V
TBIAS(3)
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
4869 tbl 05
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
4869 tbl 07
Recommended DC Operating
Conditions with VDDQ at 2.5V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS
Ground
0
V
VIH
Input High Voltage(3)
(Address & Control Inputs)
1.7
____
VDDQ + 100mV(2)
V
VIH
Input High Voltage - I/O(3)
1.7
____
VDDQ + 100mV(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.7
V
4869 tbl 06
Maximum Operating
Temperature and Supply Voltage(1)
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 150mV
Industrial
-40OC to +85OC0V
3.3V
+ 150mV
4869 tbl 04
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT(2)
Output Capacitance
VOUT = 0V
10.5
pF
4869 tbl 08
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
70V659S15DRI 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 15NS 208PQFP - Bulk
70V7319S133BC 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:6
70V7319S133BC8 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:1,000
70V7319S133BF 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:IDT 存儲(chǔ)容量: 組織: 訪問時(shí)間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:
70V7319S133BF8 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 256KX18 15NS/4.2NS 208FBGA - Tape and Reel
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