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| 型號： | 70V659S15DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 |
| 封裝： | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 |
| 文件頁數(shù)： | 24/24頁 |
| 文件大?。?/td> | 316K |
| 代理商： | 70V659S15DR |
9
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)
NOTE:
1. At VDD < - 2.0V input leakages are undefined.
2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details.
Symbol
Parameter
Test Conditions
70V659/58/57S
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDDQ = Max., VIN = 0V to VDDQ
___
10
A
|ILO|
Output Leakage Current
CE0
= VIH or CE1 = VIL, VOUT = 0V to VDDQ
___
10
A
VOL (3.3V)
Output Low Voltage(2)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage(2)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage(2)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage(2)
IOH = -2mA, VDDQ = Min.
2.0
___
V
4869 tbl 09
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV)
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).
5. CEX = VIL means CE0X = VIL and CE1X = VIH
CEX
= VIH means CE0X = VIH or CE1X = VIL
CEX
< 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CEX
> VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V
"X" represents "L" for left port or "R" for right port.
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ.(4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
IDD
Dynamic Operating
Current (Both
Ports Active)
CEL
and CER= VIL,
Outputs Disabled
f = fMAX(1)
COM'L
S
340
500
315
465
300
440
mA
IND
S
____
365
515
350
490
ISB1
Standby Current
(Both Ports - TTL
Level Inputs)
CEL
= CER = VIH
f = fMAX(1)
COM'L
S
115
165
90
125
75
100
mA
IND
S
____
115
150
100
125
ISB2
Standby Current
(One Port - TTL
Level Inputs)
CE"A"
= VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(1)
COM'L
S
225
340
200
325
175
315
mA
IND
S
____
225
365
200
350
ISB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports CEL and
CER
> VDD - 0.2V, VIN > VDD - 0.2V
or VIN < 0.2V, f = 0(2)
COM'L
S
315
3
15
315
mA
IND
S
____
615
6
15
ISB4
Full Standby Current
(One Port - CMOS
Level Inputs)
CE"A"
< 0.2V and CE"B" > VDD - 0.2V(5)
VIN > VDD - 0.2V or VIN < 0.2V, Active
Port, Outputs Disabled, f = fMAX(1)
COM'L
S
220
335
195
320
170
310
mA
IND
S
____
220
360
195
345
4869 tbl 10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70V659S15DRI | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 15NS 208PQFP - Bulk |
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| 70V7319S133BC8 | 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:1,000 |
| 70V7319S133BF | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:IDT 存儲容量: 組織: 訪問時(shí)間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝: |
| 70V7319S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 256KX18 15NS/4.2NS 208FBGA - Tape and Reel |
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