參數(shù)資料
型號: 6AM11
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列)
中文描述: 硅N-Channel/P-Channel功率MOS FET陣列(不適用溝道/頁溝道功率MOSFET的陣列)
文件頁數(shù): 4/5頁
文件大?。?/td> 42K
代理商: 6AM11
6AM11
4
6
50
150
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
5
1
25
75
125
0
3
4
C
6 Device Operation
4 Device Operation
2 Device Operation
1 Device Operation
2
100
Condition : Channel Dissipation of
each die is identical
60
50
150
Case Temperature T
C
(°C)
Maximum Channel Dissipation Curve
25
75
125
0
40
C
6 Device Operation
4 Device Operation
2 Device Operation
1 Device Operation
20
100
Condition : Channel Dissipation of
each die is identical
–50
–5
–0.05
–1
–10
–100
Drain to Source Voltage V
DS
(V)
D
D
–10
–0.1
–0.3
–3
–30
Ta = 25°C
10
μ
s
μ
s
1m
DCOpeaion(T
C
=25C
PW=10m 1Sho)
Maximum Safe Operation Area
(P-Channel)
–20
–2
–1
–0.5
–0.2
–0.1
Opeaioninthsaea
i imtedb R
DS(on
Pch
50
5
0.05
1
10
100
Drain to Source Voltage V
DS
(V)
D
D
10
0.1
0.3
3
30
Ta = 25°C
10
μ
s
100
μ
s
1ms
DCOpeaion(T
C
=25C
PW=10m 1Sho)
Maximum Safe Operation Area
(N-Channel)
20
2
1
0.5
0.2
0.1
Opeaioninthsaea
islmtedbyR
DS(on
Nch
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