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參數(shù)資料
| 型號： | 6AM11 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁溝道功率MOSFET的陣列） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 6AM11 |
6AM11
3
Electrical Characteristics
(Ta = 25°C) (1 Unit)
N channel
Min
60
P channel
Min
–60
Item
Drain to source
breakdown voltage
Gate to source
breakdown voltage
Gate to source leak
current
Zero gate voltage drain
current
Gate to source cutoff
voltage
Static drain to source
on state resistance
Symbol
V
(BR)DSS
Typ
—
Max
—
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
V
(BR)GSS
±20
—
—
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
I
GSS
—
—
±10
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
I
DSS
—
—
250
—
—
–250 μA
V
DS
= 50 V, V
GS
= 0
V
GS(off)
1.0
—
2.0
–1.0
—
–2.0
V
I
D
= 1 mA, V
DS
= 10 V
R
DS(on)
—
0.13
0.17
—
0.15
0.2
I
D
= 2.5 A,
V
GS
= 10 V*
I
D
= 2.5 A, V
GS
= 4 V*
I
D
= 2.5 A,
V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
—
2.7
0.18
4.5
0.24
—
—
2.7
0.20
5.0
0.27
—
S
1
Forward transfer
admittance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode
forward voltage
Body to drain diode
reverse recovery time
Note
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
|y
fs
|
1
Ciss
Coss
Crss
—
—
—
400
220
60
—
—
—
—
—
—
900
460
130
—
—
—
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
—
—
—
—
5
30
170
75
1.0
—
—
—
—
—
—
—
—
—
—
8
35
180
85
–1.0
—
—
—
—
—
ns
ns
ns
ns
V
I
D
= 2.5 A, V
GS
= 10 V,
R
L
= 12
I
F
= 5 A, V
GS
= 0
t
rr
—
100
—
—
170
—
ns
I
= 5 A, V
= 0,
diF/dt = 50 A/μs
Nch: See characteristic curves of 2SK970
Pch: See characteristic curves of 2SJ172
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