參數資料
型號: 39VF6401
廠商: Silicon Storage Technology, Inc.
元件分類: FLASH
英文描述: 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述: 64兆位(x16)的多功能閃存+
文件頁數: 14/32頁
文件大?。?/td> 513K
代理商: 39VF6401
14
Preliminary Specifications
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
AC CHARACTERISTICS
TABLE 16: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 2.7-3.6V
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
T
RP1
T
RHR1
T
RY1,2
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
RST# High before Read
RST# Pin Low to Read Mode
SST39VFxx01/xx02-70
Min
70
SST39VFxx01/xx02-90
Min
90
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
Max
Max
70
70
35
90
90
45
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
0
0
0
0
20
20
30
30
0
0
500
50
500
50
20
20
T16.3 1223
TABLE 17: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
SE
T
BE
T
SCE
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Block-Erase
Chip-Erase
Min
Max
10
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
0
30
0
0
0
10
40
40
30
30
30
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
150
25
25
50
T17.1 1223
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