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參數(shù)資料
| 型號(hào)： | 2SK4213-ZK-E1-AY |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 2SK4213-ZK-E1-AY |
Data Sheet D19565EJ1V0DS
4
2SK4213
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Tr
ansfer
Admittance
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 5 V
Pulsed
75
°C
25
°C
55°C
TA = 150
°C
ID - Drain Current - A
R
DS
(on)
-Drai
nto
Source
O
n-state
Res
istanc
e-
m
Ω
0
5
10
15
0.1
1
10
100
1000
Pulsed
10 V
VGS = 4.5 V
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS
(on)
-Drain
to
Source
O
n-state
Resi
stanc
e-
m
Ω
0
5
10
15
0
5
10
15
20
ID = 30 A
Pulsed
VGS - Gate to Source Voltage - V
R
DS
(on)
-Drain
to
Source
O
n-state
Resi
stanc
e-
m
Ω
0
2
4
6
8
10
-75
-25
25
75
125
175
Pulsed
10 V, 30 A
VGS = 4.5 V, ID = 20 A
Tch - Channel Temperature -
°C
CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
C
is
s,
C
os
s,
C
rs
s-
Capaci
tance
-
pF
100
1000
10000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
V
GS
-
Gate
to
Sour
ce
V
oltage
-
V
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
ID = 30 A
VDD = 5 V
15 V
20 V
QG - Gate Charge - nC
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