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參數(shù)資料
| 型號(hào)： | 2SK4213-ZK-E1-AY |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 2SK4213-ZK-E1-AY |
Data Sheet D19565EJ1V0DS
3
2SK4213
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
dT
-
P
ercentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125 150
175
TC - Case Temperature -
°C
I
D
-
Dr
ai
nCurr
ent
-
A
0.1
1
10
100
1000
0.01
0.1
1
10
100
ID(pulse)
ID(DC)
TC = 25
°C
Single Pulse
R
D
S(
on
) L
im
ite
d
(V
G
S
=
1i0
V
)
PW
=
1
i
00
μs
DC
1 ms
10 ms
Po
we
r D
iss
ipa
tio
n L
im
ited
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t
)-
Tr
ansi
ent
T
hermal
Res
istance
-
°C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/W
Single Pulse
Rth(ch-C) = 2.78
°C/W
PW - Pulse Width - s
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
I
D
-
Drain
Cur
rent
-
A
0
10
20
30
0
123
45
VDS = 10 V
Pulsed
TA = 125
°C
75
°C
25
°C
55°C
VGS - Gate to Source Voltage - V
V
GS
(t
h)
-
G
ate
to
Source
Thr
eshol
dV
oltage
-
V
0
1
2
3
4
-75
-25
25
75
125
175
VDS = VGS
ID = 250
μA
Tch - Channel Temperature -
°C
100
μ
1 m
10 m
100 m
1
10
100
1000
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