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參數(shù)資料
| 型號(hào)： | 2SK4213-ZK-E1-AY |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 2SK4213-ZK-E1-AY |
Data Sheet D19565EJ1V0DS
2
2SK4213
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±16 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
1.5
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 5 V, ID = 16 A
12
27
S
RDS(on)1
VGS = 10 V, ID = 30 A
4.2
6.0
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 20 A
6.4
9.5
m
Ω
Input Capacitance
Ciss
VDS = 15 V,
1700
pF
Output Capacitance
Coss
VGS = 0 V,
310
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
200
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 30 A,
14
ns
Rise Time
tr
VGS = 10 V,
14
ns
Turn-off Delay Time
td(off)
RG = 3
Ω
49
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 15 V,
34
nC
Gate to Source Charge
QGS
VGS = 10 V,
5
nC
Gate to Drain Charge
QGD
ID = 30 A
10
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 30 A, VGS = 0 V
0.86
1.5
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V,
29
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
20
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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