- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371555 > 2SK3523-01R (FUJI ELECTRIC CO LTD) POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3523-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | POWER MOSFET |
| 中文描述： | 25 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 7/19頁 |
| 文件大小： | 356K |
| 代理商： | 2SK3523-01R |
D
T
F
l
t
t
H04-004-03
Fuji Electric Co.,Ltd.
MS5F5173
7 / 19
Failure Criteria
Symbols
Unit
Lower Limit
LSL * 0.8
-----
-----
LSL * 0.8
-----
LSL * 0.8
-----
Upper Limit
-----
USL * 2
USL * 2
USL * 1.2
USL * 1.2
-----
USL * 1.2
Breakdown Voltage
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
Marking
Soldering
and other damages
* LSL : Lower Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
VSD
V
A
A
V
S
V
-----
With eyes or Microscope
-----
* USL : Upper Specification Limit
Item
Failure Criteria
E
C
O
Test
No.
Test
Items
Testing methods and Conditions
Reference
Standard
EIAJ ED4701
B-111A
Sampling
number
Acceptance
number
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
BIAS
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : V
DS
(max) * 0.8
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 96hr
High temp.side : 150
±
5
°
C
Low temp.side : -55
±
5
°
C
Duration time : HT 30min,LT 30min
Number of cycles : 100cycles
Fluid : pure water(running water)
High temp.side : 100+0/-5
°
C
Low temp.side : 0+5/-0
°
C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
Ta=25
±
5
°
C
Tc=90degree
Tch
≤
Tch(max.)
Test duration : 3000 cycle
Temperature : 150+0/-5°C
Bias Voltage : V
GS
(max)
Test duration : 1000hr
Temperature : 150+0/-5°C
Bias Voltage : V
DS
(max)
Test duration : 1000hr
22
B-112A
22
B-121A
test code C
22
B-122A
test code C
22
5 Unsaturated
Pressurized
Vapor
(0:1)
B-123A
test code C
22
6 Temperature
Cycle
B-131A
test code A
22
7 Thermal Shock
B-141A
test code A
22
1 Intermittent
Operating
Life
D-322
22
2 HTRB
(Gate-source)
D-323
22
(0:1)
3 HTRB
(Drain-Source)
D-323
22
C
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3524 | N-CHANNE SILLCON POWER MOSFET |
| 2SK3524-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3525-01MR | XTAL CER SMT 6X3.5 2PAD |
| 2SK3525 | N CHANNEL SILICON POWER MOSFET |
| 2SK3526-01SJ | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3525-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。