- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371555 > 2SK3523-01R (FUJI ELECTRIC CO LTD) POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3523-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | POWER MOSFET |
| 中文描述： | 25 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 356K |
| 代理商： | 2SK3523-01R |
D
T
F
l
t
t
H04-004-03
Fuji Electric Co.,Ltd.
MS5F5173
11 / 19
12. Note on implementation
12.1. Soldering
Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, the following guidelines from the quality assurance standard must be
observed.
1) Solder temperature and duration (Through-Hole Package)
Solder temperature
260
±
5
°
C
350
±
10
°
C
2) The device should not be soldered closer than 1mm from the package. (* through-hole package)
3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath.
12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance. Both of these conditions may lead the device to be destructed.
Table 1 : Recommended tightening torques.
Duration
10
±
1 seconds
3.5
±
0.5 seconds
Package style
Screw
Recommended tightening
torques
TO-220
TO-220F
TO-3P
TO-3PF
TO-247
TO-3PL
M3
30 – 50 Ncm
M3
40 – 60 Ncm
M3
60 –80 Ncm
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a
point may cause the MOSFETs to be destructed. We recommend in such condition to process the
surface of heat sink within
±
50
μ
m and use of thermal compound to optimize its efficiency of heat
radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple
method is to apply a dot of compound of the appropriate quantity to the center of the case just below
the chip mount.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3524 | N-CHANNE SILLCON POWER MOSFET |
| 2SK3524-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3525-01MR | XTAL CER SMT 6X3.5 2PAD |
| 2SK3525 | N CHANNEL SILICON POWER MOSFET |
| 2SK3526-01SJ | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3525-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。