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參數(shù)資料
| 型號(hào)： | 2SK3160-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | 2SK3160-E |
2SK3160
Rev.3.00 Sep 07, 2005 page 5 of 7
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
VGS = 0, –5 V
10 V
5 V
10
8
6
4
2
25
50
75
100
125
150
0
Pulse Test
IAP = 10 A
VDD = 50 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 4.17
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SK3161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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