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參數(shù)資料
| 型號(hào)： | 2SK3176PBF |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | 2SK3176PBF |
2SK3176
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
High forward transfer admittance: |Yfs| = 30 S (typ.)
Low leakage current: IDSS = 100 mA (max) (VDS = 200 V)
Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
30
Drain current
Pulse (Note 1)
IDP
120
A
Drain power dissipation
(Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
925
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Please use devices on condition that the channel temperature is below 150
°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 Ω, IAR = 30 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50.0
°C/W
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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