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參數(shù)資料
| 型號： | 2SK3160-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2SK3160-E |
2SK3160
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
40
30
20
10
0
50
100
150
200
100
3
10
1
0.1
0.01
12
10 20
100
20
16
12
8
4
0
12
34
5
0
24
6
8
10
Ta = 25
°C
Tc = 75
°C
25
°C
–25
°C
Operation in
this area is
limited by RDS(on)
VDS = 10 V
Pulse Test
100
s
1 ms
PW
=10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
10
s
20
16
12
8
4
3.5 V
3 V
VGS =2.5 V
10 V
Pulse Test
5 V
4 V
0.3
0.03
500
30
5
50
200
1
10
5
500
20
50
10
2
5
4
3
2
1
0
48
12
16
20
ID = 10 A
2 A
50
20
200
100
VGS = 4 V
10 V
Pulse Test
100
5 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SK3161-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3161L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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