參數(shù)資料
型號: 2SK3125
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
中文描述: 東芝場效應晶體管硅?頻道馬鞍山類型(喝醉MOSVI)
文件頁數(shù): 5/6頁
文件大小: 226K
代理商: 2SK3125
2SK3125
2002-08-23
5
r
th
t
w
Safe operating area
E
AS
– T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) T
ch
(°C)
N
r
t
/
t
A
A
D
D
25
50
75
100
125
150
0
200
400
600
800
1000
1
0.1
10
100
1000
1
10
100
100 s
*
1 ms
*
*
Single nonrepetitive pulse
Tc 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse)
*
VDSS max
ID max
(continuous)
DC operation
Tc 25°C
10
100
1 m
10 m
100 m
1
10
T
PDM
t
Duty t/T
Rth (ch-c) 0.833°C/W
0.1
10
0.01
1
Single pulse
0.2
0.1
0.05
0.02
0.01
Duty 0.5
15
V
15 V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
25
V
DD
25 V
、
L 140 H
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
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