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參數(shù)資料
| 型號(hào)： | 2SK3125 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSVI） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 226K |
| 代理商： | 2SK3125 |
2SK3125
2002-08-23
3
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
Y
fs
I
D
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
D
D
D
D
D
D
D
D
R
D
(
F
f
R
DS (ON)
I
D
VGS 3.25 V
8
10
0
0.2
0.4
1
0.6
0.8
0
20
60
100
40
80
Common source
Tc 25°C
Pulse test
6
5
4.5
4
3.75
3.5
VGS 3.25 V
Common source
Tc 25°C
Pulse test
4.5
8
0
1
2
5
3
4
0
20
60
100
40
80
4
4.25
10
6
5
V
OU
3.5
Tc 55°C
Common source
VDS 10 V
Pulse test
25
100
0
20
60
100
40
80
0
1
2
5
3
4
6
30
ID 70 A
15
Common source
Tc 25°C
Pulse test
0
0.2
0.6
1.0
0.4
0.8
1.2
0
2
4
10
6
8
12
25
Tc 55°C
100
Common source
VDS 10 V
Pulse test
100
1
10
1000
1
1000
10
100
100
1
10
1
100
10
VGS 10, 15 V
Common source
Tc 25°C
Pulse test
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| 2SK3128 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
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| 2SK3130 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3125_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications |
| 2SK3125_08 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC-DC Converter, Relay Drive and |
| 2SK3126 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 450V 10A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK3126(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK3126(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 450V, 10A - Rail/Tube |
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