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參數(shù)資料
| 型號(hào)： | 2SK3125 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSVI） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | 2SK3125 |
2SK3125
2002-08-23
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
30 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
30
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
1.5
3.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
30 A
5.3
7.0
m
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
30 A
30
60
S
Input capacitance
C
iss
4600
Reverse transfer capacitance
C
rss
1400
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
2300
pF
Rise time
t
r
25
Turn-ON time
t
on
40
Fall time
t
f
150
Switching time
Turn-OFF time
t
off
425
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
130
Gate-source charge
Q
gs
90
Gate-drain (“miller”) charge
Q
gd
V
DD
24 V, V
GS
10 V, I
D
70 A
40
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
70
A
Pulse drain reverse current
(Note 1)
I
DRP
210
A
Forward voltage (diode)
V
DSF
I
DR
70 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
150
ns
Reverse recovery charge
Q
rr
I
DR
70 A, V
GS
0 V,
dI
DR
/dt 50 A/ s
225
nC
Marking
※
Type
TOSHIBA
K3125
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
0.5
V
DD
15 V
I
D
30
A
V
OUT
4
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