- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄50000 > 2SK2719 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2719 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16C1B, SC-65, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 208K |
| 代理商： | 2SK2719 |
2SK2719
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
3.7
4.3
Forward transfer admittance
Yfs
VDS = 20 V, ID = 1.5 A
0.65
2.6
S
Input capacitance
Ciss
750
pF
Reverse transfer capacitance
Crss
10
pF
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
70
pF
Rise time
tr
15
Turn-on time
ton
55
Fall time
tf
30
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
110
ns
Total gate charge
(gate-source plus gate-drain)
Qg
25
nC
Gate-source charge
Qgs
13
nC
Gate-drain (“miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 3 A
12
nC
Source-Drain Diode Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
3
A
Pulse drain reverse current
(Note 1)
IDRP
9
A
Diode forward voltage
VDSF
IDR = 3 A, VGS = 0 V
1.9
V
Reverse recovery time
trr
1100
ns
Reverse recovery charge
Qrr
IDR = 3 A, VGS = 0 V
dIDR/dt = 100 A/s
7.5
C
Marking
0 V
10 V
VGS
R
L
=133
VDD 200 V
ID = 1.5 A
VOUT
4.
7
K2719
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2729-E | 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2730-E | 25 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2736-E | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2751-AL3-R | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2776(2-10S2B) | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2719(F) | 制造商:Toshiba 功能描述:Nch 900V 3A 4.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 3A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 3A 125W TO-3P(N) |
| 2SK2723-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 25A 40m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated |
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。