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參數(shù)資料
| 型號： | 2SK2112 |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK2112 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2112
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8
MIN. 0.42
±0.06
1.5
3.0
0.47
±0.06
0.42
±0.06
2.5
±
0.1
4.0
±
0.25
4.5 ± 0.1
1.6 ± 0.2
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NV
The 2SK2112 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
Low ON resistance
RDS(on) = 1.2
MAX. @VGS = 4.0 V, ID = 0.5 A
High switching speed
ton + toff < 100 ns
Low parasitic capacitance
Document No. D11232EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
100
V
Gate to Source Voltage
VGSS
VDS = 0
±20
V
Drain Current (DC)
ID(DC)
±1.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms,
±2.0
A
Duty cycle
≤ 50 %
Total Power Dissipation
PT
16 cm2
× 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2112-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2112-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2113 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2114 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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