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參數(shù)資料
| 型號(hào)： | 2SK211 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | 2-3F1C, S-MINI, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | 2SK211 |
2SK211
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admitance: |Yfs| = 9 mS (typ.)
Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDO
-18
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Marking
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = -0.5 V, VDS = 0 V
-10
nA
Gate-drain breakdown voltage
V (BR) GDO
IG = -100 mA
-18
V
Drain current
IDSS
(Note)
VGS = 0 V, VDS = 10 V
1.0
10
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 1 mA
-0.4
-4.0
V
Forward transfer admittance
Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
9
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
6.0
pF
Reverse transfer capacitance
Crss
VGD = -10 V, f = 1 MHz
0.10
0.15
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure)
18
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure)
2.5
3.5
dB
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
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|---|---|
| 2SK211_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type FM Tuner Applications |
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