參數(shù)資料
型號(hào): 2SK1058
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁數(shù): 5/8頁
文件大?。?/td> 40K
代理商: 2SK1058
2SK1056, 2SK1057, 2SK1058
5
Drain to Source Saturation
Voltage vs. Drain Current
1.0
Drain Current I
D
(A)
2
0.5
0.2
5
1.0
2
5
10
0.1
0.5
D
V
D
(
0.2
0.1
10
T
C
=–25
°
C
25
°
C 75
°
C
V
GD
= 0
Drain to Source Voltage vs.
Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
4
6
8
10
2
D
D
I
D
= 1 A
5A
T
C
= 25°C
2A
Input Capacitance vs. Gate
Source Voltage
1000
500
200
100
I
0
–2
–4
–10
Gate to Source Voltage V
GS
(V)
–6
–8
V
= 10 V
f = 1 MHz
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k
30 k 100 k
300 k 1 M
10 M
Frequency f (Hz)
3 M
F
T
C
= 25°C
V
DS
= 10 V
I
D
= 2 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1058-E 功能描述:MOSFET N-CH 160V 7A TO-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK1059 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1059-Z(AZ) 制造商:Renesas Electronics 功能描述:Bulk
2SK105A 制造商:n/a 功能描述:2SK105 TO92 N9H1D
2SK1060 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR