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參數(shù)資料
| 型號： | 2SJ687 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 161K |
| 代理商： | 2SJ687 |
Data Sheet D18719EJ2V0DS
2
2SJ687
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
20 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = m12 V, VDS = 0 V
m100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
0.6
1.2
1.45
V
Forward Transfer Admittance
Note
| yfs |
VDS =
10 V, ID = 10 A
20
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
4.5 V, ID = 10 A
5.4
7.0
m
Ω
RDS(on)2
VGS =
3.0 V, ID = 10 A
7.1
9.0
m
Ω
RDS(on)3
VGS =
2.5 V, ID = 10 A
10.8
20
m
Ω
Input Capacitance
Ciss
VDS =
10 V,
4400
pF
Output Capacitance
Coss
VGS = 0 V,
1070
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
760
pF
Turn-on Delay Time
td(on)
VDD =
10 V, ID = 10 A,
36
ns
Rise Time
tr
VGS =
4.5 V,
220
ns
Turn-off Delay Time
td(off)
RG = 3
Ω
270
ns
Fall Time
tf
310
ns
Total Gate Charge
QG
VDD =
16 V,
57
nC
Gate to Source Charge
QGS
VGS =
4.5 V,
12
nC
Gate to Drain Charge
QGD
ID =
20 A
28
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF =
20 A, VGS = 0 V
0.85
1.5
V
Reverse Recovery Time
trr
IF =
20 A, VGS = 0 V,
200
ns
Reverse Recovery Charge
Qrr
di/dt =
100 A/
μs
240
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
L
VDD
VGS =
12 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG =
2 mA
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ687-ZK-E1-AY | 功能描述:MOSFET P-CH -20V -20A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ687-ZK-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ73 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS) |
| 2SJ74 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SJ74_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Noise Audio Amplifier Applications |
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