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參數(shù)資料
| 型號： | 2SJ621 |
| 廠商： | NEC Corp. |
| 英文描述： | RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 72K |
| 代理商： | 2SJ621 |
Data Sheet D15634EJ1V0DS
2
2SJ621
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –12 V, V
GS
= 0 V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
8.0 V, V
DS
= 0 V
m
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1.0
mA
0.45
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10 V, I
D
= –3.5 A
4.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5 V, I
D
= –2.0 A
35
44
m
R
DS(on)2
V
GS
= –3.0 V, I
D
= –2.0 A
42
56
m
R
DS(on)3
V
GS
= –2.5 V, I
D
= –2.0 A
46
62
m
R
DS(on)4
V
GS
= –1.8 V, I
D
= –1.5 A
63
105
m
Input Capacitance
C
iss
V
DS
= –10 V
630
pF
Output Capacitance
C
oss
V
GS
= 0 V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
100
pF
Turn-on Delay Time
t
d(on)
V
DD
= –6.0 V, I
D
= –2.0 A
20
ns
Rise Time
t
r
V
GS
= –4.0 V
70
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
320
ns
Fall Time
t
f
200
ns
Total Gate Charge
Q
G
V
DD
= –10 V
6.2
nC
Gate to Source Charge
Q
GS
V
GS
= –4.0 V
1.0
nC
Gate to Drain Charge
Q
GD
I
D
= –3.5 A
2.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.5 A, V
GS
= 0 V
0.84
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS (
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
GS
Wave Form
DS
Wave Form
V
GS(
)
V
DS(
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ621-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics 功能描述:Pch -12V }3.5A 44m SC96 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R |
| 2SJ624 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ624(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ624-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
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