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參數(shù)資料
| 型號： | 2SJ621 |
| 廠商： | NEC Corp. |
| 英文描述： | RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SJ621 |
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D15634EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
2001
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 44 m
MAX. (V
GS
= –4.5 V, I
D
= –2.0 A)
R
DS(on)2
= 56 m
MAX. (V
GS
= –3.0 V, I
D
= –2.0 A)
R
DS(on)3
= 62 m
MAX. (V
GS
= –2.5 V, I
D
= –2.0 A)
R
DS(on)4
= 105 m
MAX. (V
GS
= –1.8 V, I
D
= –1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
SC-96 (Mini Mold Thin Type)
Marking: XG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–12
V
V
A
A
W
W
°C
°C
m
8.0
m
3.5
m
12
0.2
1.25
150
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.4
+0.1
2
1
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0
+
–
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ624 | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA |
| 2SJ625 | T-NPN-SI HIGH CURRENT AMP |
| 2SJ626 | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V |
| 2SJ633 | 2SJ633 |
| 2SJ634 | DC/ DC CONVERTER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ621-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics 功能描述:Pch -12V }3.5A 44m SC96 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R |
| 2SJ624 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ624(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ624-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
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