參數(shù)資料
型號: 2SJ607
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 4/8頁
文件大?。?/td> 78K
代理商: 2SJ607
Data Sheet D14655EJ3V0DS
4
2SJ607
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
4
1
2
3
5
V
DS
=
10 V
100
10
1
1000
0.1
T
A
=
55
C
25
C
75
C
125
C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
2
3
4
300
240
180
120
60
0
1
Pulsed
5
4.0 V
4.5 V
V
GS
=
10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
0.01
0.1
1
100
1000
10
100
1
10
Pulsed
V
DS
=
10 V
0.1
T
= 125
C
75
C
25
C
55
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
V
GS
- Gate to Source Voltage - V
R
D
0
2
4
6
8
Pulsed
20
10
0
10
I
D
=
83 A
42 A
17 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
10
1
20
16
12
8
4
0
100
1000
Pulsed
4.5 V
10 V
V
GS
=
4.0 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
=
10 V
I
D
=
1 mA
1.0
2.0
3.0
50
0
50
100
0
150
4.0
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