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參數(shù)資料
| 型號： | 2SJ607-S |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應管 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 78K |
| 代理商： | 2SJ607-S |
Data Sheet D14655EJ3V0DS
7
2SJ607
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB (MP-25)
2)
TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
φ
4
3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5
6
1
1
1.3±0.2
0.5±0.2
2.8±0.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8
1
1.3±0.2
0.5±0.2
2.8±0.2
1
4
3)
TO-263 (MP-25ZJ)
4)
TO-220SMD (MP-25Z)
Note
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
5
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
05RTYP
08RTYP
2
10 TYP.
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
3
1
4
4.8 MAX.
1.3±0.2
0.5±0.2
05RTYP
08RTYP
0.75±0.3
2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note
This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
#
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ607-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220SMD Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(2+Tab) TO-263 |
| 2SJ607-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ608 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | SIP |
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