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參數(shù)資料
| 型號： | 2SJ559 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ559 |
Data Sheet D13801EJ1V0DS00
4
2SJ559
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
–0.1
–1
–10
–100
–1000
R
DS(on)
-
Drain
to
Source
On-Stage
Resistance
-
0
10
20
30
40
50
60
VGS
= –10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
0
–2
–4
–6
–8
–10
R
DS(on)
-Drain
to
Source
On-State
Resistance
-
0
10
20
30
40
50
60
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
–1
–10
–100
VGS = 0 V
f = 1 MHz
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
100
1
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - mA
–10
–100
–1000
VDD = –3 V
VGS(on)
= –4 V
Rin = 10
td(on)
,t
r,t
d(off)
,t
f-
Switching
Time
-
ns
10
100
1000
tr
td(on)
tf
td(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
ID
-Reverse
Drain
Current
-
mA
–0.1
–1
–10
–100
–1000
TA
= –25 C
TA
= 25 C
ID
= –1 mA
ID
= –100 mA
ID
= –10 mA
TA
= 125 C
TA
= 75 C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ562 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ563 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SOT-89VAR |
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