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參數(shù)資料
| 型號： | 2SJ559 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 50K |
| 代理商： | 2SJ559 |
Data Sheet D13801EJ1V0DS00
2
2SJ559
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = –30 V, VGS = 0 V–1
A
Gate Leakage Current
IGSS
VGS =
# 20 V, VDS = 0 V
# 10
A
Gate Cut-off Voltage
VGS(off)
VDS = –3 V, ID = –10
A
–1.0
–1.4
–1.7
V
Forward Transfer Admittance
| yfs |VDS = –3 V, ID = –10 mA
20
mS
Drain to Source On-state Resistance
RDS(on)1
VGS = –2.5 V, ID = –1 mA
23
60
RDS(on)2
VGS = –4 V, ID = –10 mA
11
23
RDS(on)3
VGS = –10 V, ID = –10 mA
6
13
Input Capacitance
Ciss
VDS = –3 V5
pF
Output Capacitance
Coss
VGS = 0 V15
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
1.3
pF
Turn-on Delay Time
td(on)
VDD = –3 V
140
ns
Rise Time
tr
ID = –10 mA
330
ns
Turn-off Delay Time
td(off)
VGS(on) = –4 V
220
ns
Fall Time
tf
RG = 10
, RL = 300
320
ns
TEST CIRCUIT SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr
td(off)
tf
10 %
τ
RG = 10
ID
0
ton
toff
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