- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49989 > 2SJ579 1.2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ579 |
| 元件分類： | JFETs |
| 英文描述： | 1.2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PCP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | 2SJ579 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6384
2SJ579
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2315 No.6384–1/4
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2062A
[2SJ579]
Features
Low ON resistance.
Ultrahigh-speed switching.
4V drive.
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Tc=25C
PW≤10s, duty cycle≤1%
Marking : JQ
Continued on next page.
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
0
6
–V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
0
2
±V
)
C
D
(
t
n
e
r
u
C
n
i
a
r
DID
2
.
1
–A
)
e
s
l
u
P
(
t
n
e
r
u
C
n
i
a
r
DI P
D
8
.
4
–A
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
m
0
5
2
(
d
r
a
o
b
c
i
m
a
r
e
c
a
n
o
d
e
t
n
u
o
M
2×
)
m
8
.
05
.
1W
5
.
3W
e
r
u
t
a
r
e
p
m
e
T
l
e
n
a
h
Ch
c
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
)
R
B
(
ID
V
,
A
m
1
–
=
S
G
0
=0
6
–V
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
-
o
r
e
ZI
S
D
V S
D
V
,
V
0
6
–
=
S
G
0
=0
1
–A
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
r
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
6
1
±
=
S
D
0
=0
1
±A
e
g
a
t
l
o
V
f
o
t
u
CV
)
f
o
(
S
G
V S
D
I
,
V
0
1
–
=
D
A
m
1
–
=0
.
1
–4
.
2
–V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
I
,
V
0
1
–
=
D
A
6
.
0
–
=9
.
02
.
1S
e
c
n
a
t
s
i
s
e
R
e
t
a
t
S
-
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
c
i
t
a
t
S
R
)
n
o
(
S
D
1ID
V
,
A
6
.
0
–
=
S
G
V
0
1
–
=0
2
60
0
8m
R
)
n
o
(
S
D
2ID
V
,
A
m
4
.
0
–
=
S
G
V
4
–
=0
0
80
5
1
1m
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ583LS | 3.5 A, 250 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ595TP-FA | 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ595TP | 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ596(TP) | 8000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ596(TP-FA) | 8000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580-TD-E | 制造商:ON Semiconductor 功能描述: |
| 2SJ583 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ583LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ584LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。