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參數(shù)資料
| 型號： | 2SJ553 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SJ553 |
2SJ553(L),2SJ553(S)
5
1000
500
200
50
100
20
10
0.1
0.3
3
0
–10
–20
–30
–40
–50
10000
1000
300
100
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
–100
40
Gate Charge Qg (nc)
80
120
160
200
1000
200
500
100
20
50
10
–0.1 –0.3
–1
–3
–10
1
30
30
10
DS
V
GS
V
V = –10 V
–25 V
–50 V
100
V = –10 V
–25 V
–50 V
3000
Ciss
Coss
Crss
V = 0
f = 1 MHz
–30
–100
r
d(off)
t
tf
d(on)
t
10
di / dt = 50 A / μs
V = 0, Ta = 25 °C
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
V = –10 V, V = –30 V
PW = 5 μs, duty =
I = –30 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ553L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ560 | Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole |
| 2SJ563 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ56H | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SJ553(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263VAR |
| 2SJ553L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box |
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