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| 型號： | 2SJ56H |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 8A條（丁）|至3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2SJ56H |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
2SJ563
Ultrahigh-Speed Switching Applications
Ordering number:ENN6097A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000TS (KOTO) TA-1696 No.6097–1/4
4.5
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2062A
[2SJ563]
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
C
C
Electrical Characteristics
at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Tc=25C
PW
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