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參數(shù)資料
| 型號(hào)： | 2SJ553 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 57K |
| 代理商： | 2SJ553 |
2SJ553(L),2SJ553(S)
3
Main Characteristics
80
60
40
20
0
50
100
150
200
–100
–10
–1
–0.1
–0.1
–1
–10
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
GS
–5
–100
–1000
–50
–40
–30
–20
–10
-25 °C
25 °C
1ms
Ta = 25 °C
10μs
V = –10 V
100μs
–50
–40
–30
–20
–10
–2.5 V
–2 V
V = –10 V
–8 V
–5 V
–4 V
–3.5 V
–3 V
C
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
Typical Transfer Characteristics
Operation in
this area is
limited by R
D
D
Case Temperature Tc (°C)
Tc = 75 °C
DCOpeaion
Tc=25°C
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ553L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ560 | Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole |
| 2SJ563 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ56H | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ553(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SJ553(S) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263VAR |
| 2SJ553L | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box |
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