參數(shù)資料
型號: 2SJ399
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應晶體管
文件頁數(shù): 4/7頁
文件大?。?/td> 36K
代理商: 2SJ399
2SJ399
4
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage V (V)
V
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
–4
–8
–12
–16
–20
–0.2 A
–0.1 A
I = –0.05 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
100
Ta = 25 °C
Pulse Test
20
50
10
2
5
1
–0.01 –0.02
–0.05 –0.1
–0.2
–0.5
–1
–10 V
V = –4 V
5
4
3
2
1
–40
0
40
80
120
160
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
0
I = –0.2 A
I = –0.2 A
–0.1 A
–0.05 A
–0.1 A
–0.05 A
V = –4 V
V = –10 V
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
1
0.2
0.5
0.1
0.02
0.01
0.05
–0.01 –0.02
–0.05 –0.1
–0.2
–0.5
–1
75 °C
25 °C
V = –10 V
Pulse Test
Ta = –25 °C
相關PDF資料
PDF描述
2SJ400 Ultrahigh-Speed Switching Applications
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