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參數(shù)資料
| 型號(hào)： | 2SJ399 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 36K |
| 代理商： | 2SJ399 |
2SJ399
3
200
150
100
50
0
C
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–0.1
–0.01
–0.001
–0.3
–0.03
–0.003
1 ms
PW=
DCOpeaion
Ta = 25 °C
Operation in
this area is
limited by R
DS(on)
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
V = –2 V
–5 V
–4.5 V
–4 V
–3.5 V
–3 V
–2.5 V
Pulse Test
–0.5
–0.4
-0.3
-0.2
–0.1
0
–1
–2
–3
–4
–5
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
75 °C
25 °C
V = –10 V
Ta = –25 °C
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| 2SJ401(Q) | 制造商:Toshiba 功能描述:Pch -60V -20A 0.045@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 20A TO-220FL |
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