參數(shù)資料
型號(hào): 2SJ399
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 2/7頁
文件大?。?/td> 36K
代理商: 2SJ399
2SJ399
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch
–30
V
Gate to source voltage
±
20
V
Drain current
–0.2
A
Drain peak current
–0.4
A
Body to drain diode reverse drain current
–0.2
A
Channel dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
100
μ
s, duty cycle
10%
2. Marking is “ZF–”
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
V
I
D
= –100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
2
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
I
D
= –10
μ
A, V
DS
= –5 V
I
D
= –20 mA
V
GS
= –4 V*
1
I
D
= –10 mA
V
GS
= –10 V*
1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
–1
V
GS(off)
R
DS(on)
–1.0
–2.0
V
Static drain to source on state
resistance
2.7
5.0
2.0
3.0
Input capacitance
Ciss
1.1
pF
Output capacitance
Coss
22.3
pF
Reverse transfer capacitance
Crss
0.17
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
530
ns
I
D
= –0.1 A
V
GS
= –10 V
R
L
= 100
PW = 5
μ
s
Rise time
2170
ns
Turn-off delay time
7640
ns
Fall time
7690
ns
相關(guān)PDF資料
PDF描述
2SJ400 Ultrahigh-Speed Switching Applications
2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications
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