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參數(shù)資料
| 型號(hào)： | 2SD1101-C |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 2SD1101-C |
2SD1101
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
0.7
A
Collector peak current
i
C(peak)
1A
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
1.0
AV
CB = 20 V, IE = 0
DC current transfer ratio
h
FE*
1
85
—
240
V
CE = 1 V, IC = 0.15 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 0.5 A, IB = 0.05 A*
2
Base to emitter voltage
V
BE
—
1.0
V
CE = 1 V, IC = 0.15 A*
2
Notes: 1. The 2SD1101 is grouped by h
FE as follows.
2. Pulse test
Grade
B
C
Mark
AB
AC
h
FE
85 to 170
120 to 240
See characteristic curves of 2SD467.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1101C | SMALL SIGNAL TRANSISTOR |
| 2SD1101C | 700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1119GR | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1119GQ | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1119Q | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1105 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1109 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MP-80120V 6A 70W BCE |
| 2SD111 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 10A 100W BEC |
| 2SD1110 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR MP-80130V 7A 80W BCE |
| 2SD1111 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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