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參數(shù)資料
| 型號(hào)： | 2SD1119GQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 208K |
| 代理商： | 2SD1119GQ |
1998
Document No. D16193EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Gate drive available at logic level (VGS = –4 V)
High current control available in small
dimension due to low RDS(on) (
0.45 )
2SJ133-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC
Semiconductor
Devices”
(Document
No.
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain to source voltage
VDSS
VGS = 0
60
V
Gate to source voltage
VGSS
VDS = 0
–
+20
V
Drain current (DC)
ID(DC)
TC = 25
°C
–
+2.0
A
Drain current (pulse)
ID(pulse)
PW
≤ 300
s
duty cycle
≤ 10 %
–
+8.0
A
Total power dissipation
PT
TC = 25
°C
20
W
Total power dissipation
PT
Ta = 25
°C
1.0*, 2.0**
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
* Printing board mounted
** 7.5 cm
2
× 0.7 mm ceramic board mounted
INTERNAL
EQUIVALENT CIRCUIT
Electrode connection
<1> Gate (G)
<2> Drain (D)
<3> Source (S)
<4> Fin (drain)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1119GRL | 功能描述:TRANS NPN 25VCEO 3A MINIP-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1119Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 3A I(C) | SOT-89 |
| 2SD1119-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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