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參數(shù)資料
| 型號(hào)： | 2SD1119Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 237K |
| 代理商： | 2SD1119Q |
Transistors
1
Publication date: November 2002
SJC00207CED
2SD1119
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 025
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 0.5 A
230
600
hFE2
VCE = 2 V, IC = 2 A
150
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
1
V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
50
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
Rank
Q
R
230 to 380
340 to 600
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Marking Symbol: T
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD1133 | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1119-QR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1119-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1126 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SD1126(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB |
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