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參數(shù)資料
| 型號： | 2SC5993Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 2SC5993Q |
Power Transistors
1
Publication date: July 2004
SJD00320AED
2SC5993
Silicon NPN epitaxial planar type
For power amplification
For TV VM circuit
■ Features
Satisfactory linearity of forward current transfer ratio h
FE
High transition frequency (f
T)
Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
180
V
Collector-emitter voltage (Base open)
VCEO
180
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation
PC
20
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
180
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 180 V, I
E
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 0.1 A
60
240
Collector-emitter saturation voltage
VCE(sat)
IC
= 1 A, I
B
= 0.1 A
0.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.2 A, f = 10 MHz
130
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
(Common base, input open circuited)
Turn-on time
ton
IC = 0.4 A, Resistance loaded
0.1
s
Storage time
tstg
IB1
= 0.04 A, I
B2
= 0.04 A
1.5
s
Fall time
tf
VCC = 100 V
0.1
s
Rank
Q
P
hFE
60 to 140
120 to 240
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5994-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5998YC-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC6000 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications DC-DC Converter Applications |
| 2SC6000(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 50V 7A hfe250-400 13ns |
| 2SC6010 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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