- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30573 > 2SC6045G (PANASONIC CORP) 80 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC6045G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 80 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI3-F2, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 452K |
| 代理商： | 2SC6045G |
Transistors
Publication date: June 2007
SJC00404AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6045G
Silicon NPN epitaxial planar type
For UHF band low noise amplication
Features
Low noise gure NF
High forward transfer gain |S21e|2
High transition frequency fT
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2
V
Collector current
IC
80
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
-
55 to +125
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 mA, IB = 0
10
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
1
m
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 2 V, IC = 0
1
m
A
Forward current transfer ratio
hFE
VCE = 8 V, IC = 20 mA
50
150
300
Transition frequency
fT
VCE = 8 V, IC = 15 mA, f = 0.8 GHz
5
6
GHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.7
1.2
pF
Forward transfer gain
|
S21e|2
VCE = 8 V, IC = 15 mA, f = 0.8 GHz
11
14
dB
Maximum unilateral power gain
GUM
VCE = 8 V, IC = 15 mA, f = 0.8 GHz
15
dB
Noise gure
NF
VCE = 8 V, IC = 7 mA, f = 0.8 GHz
1.3
2.0
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Marking Symbol: 3M
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC6071-TL | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6075 | 2.5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6080 | 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6092LS | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6092LS | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6046 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6046_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC605 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN SILICON TRANSISTOR |
| 2SC6053 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC6053_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。