參數(shù)資料
型號： 2SC5287
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關晶體管）)
中文描述： 5 A, 550 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SC5287
133
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
2S C5287
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5287
900
550
7
5(
Pulse
10)
2.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5287
100
max
100
max
550
min
10to25
0.5
max
1.2
max
6
typ
50
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1.8A
I
C
=1.8A, I
B
=0.36A
I
C
=1.8A, I
B
=0.36A
V
CE
=12V, I
E
=–0.35A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.03
0.1
0.05
1
7
5
0.5
0
1.5
1.0
0.5
Collector Current I
C
(A)
V
BE
(sat)
V
CE
(sat)
I
C
/I
B
=5 Const.
0
7
5
6
4
3
2
1
0
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
0.02
0.1
0.05
1
10
5
0.5
4
5
10
40
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0.2
1
0.5
5
0.1
0.5
5
6
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
250V
I
C
:I
B1
:I
B2
=1:0.15:–0.5
0.3
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
50
500
1000
100
1
5
0.5
0.1
0.03
0.05
20
10
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
I
B2
=–1.0A
L=3mH
Duty:less than 1%
10
50
100
500
1
0.5
0.03
0.1
0.05
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
100
μ
s
50
μ
s
0
0
2
1
5
3
4
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
600mA
700mA
400mA
150mA
250mA
I
B
=50mA
Without Heatsink
Natural Cooling
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
139
1.8
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.9
t
on
(
μ
s)
0.7
max
t
stg
(
μ
s)
4.0
max
t
f
(
μ
s)
0.5
max
I
(A)
0.27
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
2SC5287_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SC5288 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5288(NE68939) 制造商:NEC 制造商全稱:NEC 功能描述:Discrete
2SC5288-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5288-T1-A 制造商:Renesas Electronics Corporation 功能描述:Cut Tape
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