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參數(shù)資料
| 型號： | 2SC5288(NE68939) |
| 廠商： | NEC Corp. |
| 英文描述： | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SC5288(NE68939) |
1995
DATA SHEET
SILICON TRANSISTOR
2SC5288
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P
–1
= 24 dBm TYP.
@f = 1.9 GHz, V
CC
= 3.6 V, I
Cq
= 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5288-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
6.0
V
Emitter to Base Voltage
V
EBO
2.0
V
Collector Current
I
C
150
mA
Total Power Dissipation
P
T
200 (CW)
mW
1.0 (duty = 1/8)
Note
W
2.5 (duty = 1/24)
Note
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
Pulse period is 10 msec or less.
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
(
(
0
0
+
–
2.8
1.5
+0.2
+0.2
2
3
1
4
2
0
+
–
0
+
–
T
0
+
–
1
+
–
0
0
+
–
0
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10249EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5288-T1 | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5289 | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5291 | High-Voltage Switching Applications |
| 2SC5296 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
| 2SC5297 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5288-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5288-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SC5288-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5289 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5289(NE69039) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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