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參數(shù)資料
| 型號(hào)： | 2SC5289 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 中文描述： | NPN硅外延晶體管L波段低功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SC5289 |
1995
DATA SHEET
SILICON TRANSISTOR
2SC5289
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P
–1
= 27 dBm TYP.
@f = 1.9 GHz, V
CC
= 3.6 V, I
Cq
= 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5289-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
6.0
V
Emitter to Base Voltage
V
EBO
2.0
V
Collector Current
I
C
300
mA
Total Power Dissipation
P
T
200 (CW)
mW
1.2 (duty = 1/8)
Note
W
3.0 (duty = 1/24)
Note
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
Pulse period is 10 msec or less.
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
Document No. P10250EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
(
(
0
0
+
–
2.8
1.5
+0.2
+0.2
2
3
1
4
2
0
+
–
0
+
–
T
0
+
–
1
+
–
0
0
+
–
0
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5289(NE69039) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5289T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 300MA I(C) | SOT-143R |
| 2SC5289-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5291 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC5291R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
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