參數(shù)資料
型號(hào)： 2SC4130
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Epitaxial Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN外延平面晶體管（高壓和高速開關(guān)晶體管）)
中文描述： 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SC4130
88
Silicon NPN Epitaxial Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
2S C4130
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4130
500
400
10
7(
Pulse
14)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4130
100
max
100
max
400
min
10to30
0.5
max
1.3
max
15
typ
50
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
4
2
6
7
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
400mA
600mA
1000mA
200mA
100mA
50mA
I
B
=40mA
0.02
0.1
0.05
1
5
7
0.5
2
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2
–55C
V
CE
(sat)
1
2
5
C
(
C
a
s
e
T
e
m
p
)
0.2
1
0.5
7
5
0.1
0.5
5
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:2
0.3
1
4
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
2
500
100
1
0.5
0.1
0.01
0.05
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
10
50
5
2
100
500
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
10ms
100
μ
s
1ms
0.02
0.1
0.05
1
7
5
0.5
2
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0
7
2
4
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
–Cee)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
67
3
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.6
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
2.2
max
t
f
(
μ
s)
0.5
max
I
(A)
0.3
V
(V)
10
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4131 Silicon NPN Epitaxial Planar Transistor(硅NPN外延平面晶體管)
2SC4134 NPN Epitaxial Planar Silicon Transistors for High-Voltage Switching Applications(用于高電壓轉(zhuǎn)換應(yīng)用的NPN硅外延平面型晶體管)
2SC4139 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）)
2SC4140 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）)
2SC4153 Silicon NPN Triple Diffused Planar Transistor( Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（開關(guān)晶體管）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4130LF608 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: 2SC4559LP.KT
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2SC4131_07 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Epitaxial Planar Transistor
2SC4132 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-89
2SC4132N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 2A I(C) | SOT-89
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