參數(shù)資料
型號(hào)： 2SC4139
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
中文描述： 15 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SC4139
91
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
2S C4139
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4139
500
400
10
15(
Pulse
30)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4139
100
max
100
max
400
min
10to30
0.5
max
1.3
max
10
typ
85
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.1
0.05
0.03
1
5
10
20
0.5
0
1.5
0.5
1.0
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
1
0.5
10
15
5
0.1
0.5
5
8
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:I
B2
=10:1:–2
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
120
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
500
100
1
10
50
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1A
Duty:less than 1%
10
50
5
100
500
5
1
10
50
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100
μ
s
0
10
4
2
8
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(sTm
–Csm
2 se)
0.02
0.1
0.05
1
15
10
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0
0
5
10
15
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
1.2A
600mA
800mA
400mA
200mA
1.5A
I
B
=100mA
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
25
8
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1.6
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
3
max
t
f
(
μ
s)
0.5
max
I
(A)
0.8
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4140 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
2SC4153 Silicon NPN Triple Diffused Planar Transistor( Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（開(kāi)關(guān)晶體管）)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4140 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 400V 18A TO3P 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR MT100 500V 18A 130WBCE
2SC4140_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SC4142 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-3P-FM1500V 5A 50W BCE
2SC4143 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P
2SC4146 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
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