參數(shù)資料
型號(hào)： 2SC4140
廠(chǎng)商： SANKEN ELECTRIC CO LTD
元件分類(lèi)： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
中文描述： 18 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 25K
代理商： 2SC4140
92
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4140
500
400
10
18(
Pulse
36)
6
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4140
100
max
100
max
400
min
10to30
0.5
max
1.3
max
10
typ
165
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=2A
I
C
=10A, I
B
=2A
V
CE
=12V, I
E
=–2.0A
V
CB
=10V, f=1MHz
2S C4140
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
8
4
12
16
18
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
800mA
1.2A
600mA
400mA
200mA
1.6A
I
B
=100mA
0.02
0.1
0.05
1
5
10
18
0.5
0
1
1.4
C
C
(
B
B
(
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
1
0.2
0.5
10
18
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:2
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
130
100
50
3.5
0
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
25
50
75
100
125
150
10
50
5
500
100
1
0.5
0.03
0.1
0.05
10
50
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
10
50
5
100
500
0.05
0.03
5
1
0.5
0.1
10
50
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100
μ
s
10ms
1ms
DC
0.02
0.1
0.05
1
18
10
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0
18
8
4
16
12
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
–Cee)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
20
10
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–2
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
3
max
t
f
(
μ
s)
0.5
max
I
(A)
1
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
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參數(shù)描述
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