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參數(shù)資料
| 型號： | 2SC3587 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管低噪聲放大用于微波 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 2SC3587 |
3
2SC3587
S PARAMETER
V
CE
= 6 V, I
C
= 10 mA, Z
O
= 50
f (MHz)
500
1000
1500
2000
2500
3000
3500
4000
|S
11
|
.466
.322
.271
.256
.262
.270
.294
.327
∠
S
11
-
82.1
-
123.8
-
153.7
-
176.6
167.3
152.0
142.0
129.7
|S
21
|
13.209
8.371
5.672
4.304
3.456
3.095
2.595
2.231
∠
S
21
120.8
95.7
78.7
66.9
58.6
46.1
35.0
27.6
|S
12
|
.0288
.0424
.0561
.0697
.0848
.0955
.106
.127
∠
S
12
50.9
54.2
54.5
54.1
51.9
48.0
43.2
35.2
|S
22
|
.634
.610
.579
.549
.531
.507
.498
.500
∠
S
22
-
25.0
-
29.4
-
33.5
-
38.7
-
46.2
-
52.8
-
61.0
-
68.4
INSERTION GAIN vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
15
6
5
4
3
2
1
2
5
10
20
50
10
5
30
20
10
7
5
3
2
0
0.5
1
1
2
3
5
7
10
20
30
5
IC - Collector Current - mA
IC - Collector Current - mA
IC - Collector Current - mA
10
50 70
2
|
2
N
T
V
CE
= 6 V
V
CE
= 6 V
V
CE
= 6 V
f = 2 GHz
3 GHz
4 GHz
f = 4 GHz
f = 2 GHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3588 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SC3588-Z | NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SC3588-ZK | BJT |
| 2SC3588-ZL | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3588-ZM | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3588-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SC3588-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3588-K-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3589 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-220 |
| 2SC3596 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 80V .3A 1.2W ECB |
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