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參數(shù)資料
| 型號： | 2SC3587 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管低噪聲放大用于微波 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 2SC3587 |
1996
DATA SHEET
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
Low noise
: NF = 1.7 dB TYP.
NF = 2.6 dB TYP.
@ f = 2 GHz
@ f = 4 GHz
High power gain : G
A
= 12.5 dB TYP. @ f = 2 GHz
G
A
= 8.0 dB TYP.
@ f = 4 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
E
C
B
E
45
°
0.5
±
0.05
0
±
0
+
-
2.55
±
0.2
2.1
φ
3.8 MIN.
3
3
1
0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
T (T
= 25
°
C)
580
mW
Junction Temperature
T
j
200
°
C
Storage Temperature
T
stg
-
65 to +150
°
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 10 V
1.0
μ
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V
1.0
μ
A
DC Current Gain
h
FE
V
CE
= 6 V, I
C
= 10 mA Pulse
50
100
250
Gain Bandwidth Product
f
T
V
CE
= 6 V, I
C
= 10 mA
10.0
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 10 V, f = 1 MHz
0.2
0.7
pF
Noise Figure
NF
Note
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
1.7
2.4
dB
f = 4 GHz
2.6
dB
Insertion Gain
|S
21e
|
2
V
CE
= 6 V, I
C
= 10 mA
f = 2 GHz
10.5
12.5
dB
f = 4 GHz
7.5
dB
Maximum Available Gain
MAG
V
CE
= 6 V, I
C
= 10 mA, f = 4 GHz
10
dB
Power Gain
G
A
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
12.5
dB
f = 4 GHz
8.0
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3588 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SC3588-Z | NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SC3588-ZK | BJT |
| 2SC3588-ZL | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3588-ZM | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3588-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SC3588-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3588-K-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3589 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-220 |
| 2SC3596 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 80V .3A 1.2W ECB |
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