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參數(shù)資料
| 型號(hào)： | 2SB858 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB858 |
2SB857, 2SB858
3
Collector to emitter Voltage V
CE
(V)
C
C
–2
–4
–6
–8
–10
Typical Output Characteristics
0
–1
–2
–3
–4
–5
T
C
= 25
°
C
P
c
0W
I
B
= 0
–10 mA
–20
–30
–40
–50
–60
–70
–0.01
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Base to emitter voltage V
BE
(V)
C
C
(
0 –0.2–0.4–0.6–0.8–1.0–1.2–1.4
Typical Transfer Characteristics
V
CE
= –4 V
T
C
°
C
2
–
5
–0.01–0.02 –0.05–0.1 –0.2
10
20
50
100
200
500
1,000
Collector current I
C
(A)
D
F
–0.5 –1.0 –2
–4
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –4 V
T
C
= 75
°
C
25
–25
0
–0.01–0.02 –0.05–0.1 –0.2
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
Collector current I
C
(A)
C
V
C
–0.5 –1.0 –2
–5
Collector to Emitter Saturation
Voltage vs. Collector Current
T
C
= 75
°
C
25
–25
I
C
= 10 I
B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB859 | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 2SD2300 | Silicon NPN Triple Diffused |
| 2SD2300 | Power Bipolar Transistors |
| 2SB860 | Silicon PNP Triple Diffused |
| 2SB861 | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB858B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB858D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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