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參數(shù)資料
| 型號： | 2SB860 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴散硅進步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB860 |
2SB860
Silicon PNP Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Tj
–100
V
Collector to emitter voltage
–100
V
Emitter to base voltage
–4
V
Collector current
–4
A
Collector peak current
–5
A
Collector power dissipation
1.8
W
40
W
Junction temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–45 to +150
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PDF描述 |
|---|---|
| 2SB861 | Silicon PNP Triple Diffused(三倍擴散PNP晶體管) |
| 2SB865 | PNP Epitaxial Planar Silicon Darlington Tranasistors for Drivers Applications(驅動器應用的PNP硅外延平面型達林頓晶體管) |
| 2SD1153 | NPN Epitaxial Planar Silicon Darlington Tranasistors for Drivers Applications(驅動器應用的NPN硅外延平面型達林頓晶體管) |
| 2SB874 | LOW PREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1177 |
| 2SB880 | PNP Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications(驅動器應用的PNP硅外延平面型達林頓晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
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